A research team from Tohoku University described a 128Mbit spin-transfer torque magnetoresistive ram (STT-MRAM) with a write speed of 14ns at IEDM in December. It is aimed at embedded memory, such as for cache in IoT and AI applications. “This is currently the world’s fastest write speed for embedded memory application with a density over …
This story continues at IEDM: fastest STT-MRAM for embedded storage
Or just coverage at Electronics Weekly // Read more: original article.
